Novel metastable metallic and semiconducting germaniums

dc.bibliographicCitation.articleNumber1466
dc.bibliographicCitation.firstPage1466
dc.bibliographicCitation.issue1
dc.bibliographicCitation.journalTitleScientific Reports
dc.bibliographicCitation.volume3
dc.contributor.authorSelli, Daniele
dc.contributor.authorBaburin, Igor A.
dc.contributor.authorMartoňák, Roman
dc.contributor.authorLeoni, Stefano
dc.date.accessioned2025-03-04T10:43:04Z
dc.date.available2025-03-04T10:43:04Z
dc.date.issued2013
dc.description.abstractGroup-IVa elements silicon and germanium are known for their semiconducting properties at room temperature, which are technologically critical. Metallicity and superconductivity are found at higher pressures only, Ge β-tin (tI4) being the first high-pressure metallic phase in the phase diagram. However, recent experiments suggest that metallicity in germanium is compatible with room conditions, calling for a rethinking of our understanding of its phase diagram. Missing structures can efficiently be identified based on structure prediction methods. By means of ab initio metadynamics runs we explored the lower-pressure region of the phase diagram of germanium. A monoclinic germanium phase (mC16) with four-membered rings, less dense than diamond and compressible into β-tin phase (tI4) was found. Tetragonal bct-5 appeared between diamond and tI4. mC16 is a narrow-gap semiconductor, while bct-5 is metallic and potentially still superconducting in the very low pressure range. This finding may help resolving outstanding experimental issues.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/18748
dc.identifier.urihttps://doi.org/10.34657/17767
dc.language.isoeng
dc.publisher[London] : Springer Nature
dc.relation.doihttps://doi.org/10.1038/srep01466
dc.relation.essn2045-2322
dc.rights.licenseCC BY-NC-ND 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subject.ddc500
dc.subject.ddc600
dc.subject.otherComputer Simulationeng
dc.subject.otherDiamondeng
dc.subject.otherElectric Conductivityeng
dc.subject.otherGermaniumeng
dc.subject.otherMetalseng
dc.subject.otherModels, Chemicaleng
dc.subject.otherModels, Moleculareng
dc.subject.otherPressureeng
dc.subject.otherSemiconductorseng
dc.subject.otherSiliconeng
dc.subject.otherTemperatureeng
dc.subject.otherThermodynamicseng
dc.subject.otherTineng
dc.subject.otherdiamondeng
dc.subject.othergermaniumeng
dc.subject.othermetaleng
dc.subject.othersiliconeng
dc.subject.othertineng
dc.subject.otherarticleeng
dc.subject.otherchemical modeleng
dc.subject.otherchemical structureeng
dc.subject.otherchemistryeng
dc.subject.othercomputer simulationeng
dc.subject.otherelectric conductivityeng
dc.subject.otherpressureeng
dc.subject.othersemiconductoreng
dc.subject.othertemperatureeng
dc.subject.otherthermodynamicseng
dc.titleNovel metastable metallic and semiconducting germaniumseng
dc.typeArticle
dc.typeText
tib.accessRightsopenAccess
wgl.contributorINP
wgl.subjectPhysikger
wgl.typeZeitschriftenartikelger
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