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- ItemMicrowave plasma discharges for biomass pretreatment: Degradation of a sodium carboxymethyl cellulose model(New York, NY : American Inst. of Physics, 2020) Honnorat, B.; Brüser, V.; Kolb, J.F.Biogas production is an important component of an environmentally benign renewable energy strategy. However, the cost-effectiveness of biogas production from biomass is limited by the presence of polymeric structures, which are recalcitrant to digestion by bacteria. Therefore, pretreatments must often be applied prior to anaerobic fermentation to increase yields of biogas. Many physico-chemical pretreatments have a high energy demand and are generally costly. An alternative could be the ignition of a plasma directly in the biomass substrate. The reactive species that are generated by plasma-liquid interactions, such as hydroxyl radicals and hydrogen peroxides, could contribute significantly to the disintegration of cell walls and the breakage of poorly digestible polymers. With respect to economic, processing, and other potential benefits, a microwave instigated and sustained plasma was investigated. A microwave circuit transmitted 2-kW pulses into a recirculated sodium carboxymethyl cellulose solution, which mimicked the rheological properties of biomass. Each microwave pulse had a duration of 12.5 ms and caused the ignition of a discharge after a vapor bubble had formed. Microwaves were absorbed in the process with an efficiency of ∼97%. Slow-motion imaging showed the development of the discharge. The plasma discharges provoked a decrease in the viscosity, probably caused by the shortening of polymer chains of the cellulose derivative. The decrease in viscosity by itself could reduce processing costs and promotes bacterial activity in actual biomass. The results demonstrate the potential of microwave in-liquid plasma discharges for the pretreatment of biomass. © 2020 Author(s).
- ItemComprehensive characterization of osseous tissues from impedance measurements by effective medium approximation(New York, NY : American Inst. of Physics, 2021) Wei, Wenzuo; Shi, Fukun; Zhuang, Jie; Kolb, Juergen F.A unified mixing (UM) model was developed to derive microstructural information of trabecular bone, i.e., bone volume fraction (BV/TV), from electrical impedance spectroscopy. A distinct advantage of the UM-model over traditional methods, such as equivalent circuit models and multivariate analysis, is that the influence of both the environment (hydroxyapatite) and different inclusions (water, fat, and air) can be taken into account simultaneously. In addition, interactions between the different components such as interfacial polarization can be addressed by a dedicated fitting parameter v. Accordingly, values of BV/TV for different bone samples, e.g., including or not including water, were determined in the higher frequency range of 1-5 MHz. Results showed good agreement with experimental data obtained by micro-computer tomography. In particular, predictions for dielectric parameters that were derived for 3 and 4 MHz were found most promising for the assessment and distinction of osteopathic conditions and differences. This was shown by a clear differentiation of osseous tissues, e.g., the greater trochanter, femoral head, and femoral neck.
- ItemOn the relationship between SiF4plasma species and sample properties in ultra low-k etching processes(New York, NY : American Inst. of Physics, 2020) Haase, Micha; Melzer, Marcel; Lang, Norbert; Ecke, Ramona; Zimmermann, Sven; van Helden, Jean-Pierre H.; Schulz, Stefan E.The temporal behavior of the molecular etching product SiF4 in fluorocarbon-based plasmas used for the dry etching of ultra low-k (ULK) materials has been brought into connection with the polymer deposition on the surface during plasma treatment within the scope of this work. For this purpose, time-resolved measurements of the density of SiF4 have been performed by quantum cascade laser absorption spectroscopy. A quantification of the non-linear time dependence was achieved by its characterization via a time constant of the decreasing SiF4 density over the process time. The time constant predicts how fast the stationary SiF4 density is reached. The higher the time constant is, the thicker the polymer film on top of the treated ultra low-k surface. A correlation between the time constant and the ULK damage was also found. ULK damage and polymer deposition were proven by Variable Angle Spectroscopic Ellipsometry and X-ray Photoelectron Spectroscopy. In summary, the observed decay of the etching product concentration over process time is caused by the suppressed desorption of the SiF4 molecules due to a more dominant adsorption of polymers. © 2020 Author(s).
- ItemExtensive study of magneto-optical and optical properties of Cd1−xMnxTe between 675 and 1025 nm(New York, NY : American Inst. of Physics, 2023) Tyborski, Christoph; Hassan, Muhammad T.; Flisgen, Thomas; Schiemangk, Max; Wicht, AndreasWe determine Faraday rotations and measure the optical reflection and transmission from magneto-optical Cd1−xMnxTe crystals with various stoichiometric ratios. For wavelengths between 675 and 1025 nm, we derive Verdet constants, optical loss coefficients, and the complex indices of reflection that are relevant measures to find suitable stoichiometric ratios of Cd1−xMnxTe for the realization of miniaturized optical isolators. By reflection and transmission measurements, we determine the stoichiometric ratios of several different Cd1−xMnxTe crystals and discuss the observed dependence of the optical properties on the stoichiometric ratio with respect to their use in optical isolators. Finally, we show the relevant figure of merit, i.e., the ratio of Verdet constants and optical loss coefficients for Cd1−xMnxTe crystals with Mn contents ranging from x = 0.14 to x = 0.50.
- ItemHigh-temperature annealing of AlN films grown on 4H-SiC(New York, NY : American Inst. of Physics, 2020) Brunner, F.; Cancellara, L.; Hagedorn, S.; Albrecht, M.; Weyers, M.The effect of high-temperature annealing (HTA) at 1700 °C on AlN films grown on 4H-SiC substrates by metalorganic vapor phase epitaxy has been studied. It is shown that the structural quality of the AlN layers improves significantly after HTA similar to what has been demonstrated for AlN grown on sapphire. Dislocation densities reduce by one order of magnitude resulting in 8 × 108 cm-2 for a-type and 1 × 108 cm-2 for c-type dislocations. The high-temperature treatment removes pits from the surface by dissolving nanotubes and dislocations in the material. XRD measurements prove that the residual strain in AlN/4H-SiC is further relaxed after annealing. AlN films grown at higher temperature resulting in a lower as-grown defect density show only a marginal reduction in dislocation density after annealing. Secondary ion mass spectrometry investigation of impurity concentrations reveals an increase of Si after HTA probably due to in-diffusion from the SiC substrate. However, C concentration reduces considerably with HTA that points to an efficient carbon removal process (i.e., CO formation). © 2020 Author(s).
- ItemCharge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals(New York, NY : American Inst. of Physics, 2020) Boy, Johannes; Handwerg, Martin; Mitdank, Rüdiger; Galazka, Zbigniew; Fischer, Saskia F.The temperature dependence of the charge carrier density, mobility, and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about σ = 286 S/cm due to a high electron concentration of n = 3.26 × 1019 cm−3 caused by unintentional doping. The mobility at room temperature is μ = 55 cm2/V s, whereas the scattering on ionized impurities limits the mobility to μ = 62 cm2/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is SZnGa2O4−Al = (−125 ± 2) μV/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K, we observed the maximum Seebeck coefficient due to the phonon drag effect. © 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
- ItemTemperature dependence of the complex permittivity in microwave range of some industrial polymers(New York, NY : American Inst. of Physics, 2022) Porteanu, Horia-Eugen; Kaempf, Rudolf; Flisgen, Thomas; Heinrich, WolfgangThe microwave properties of a number of polymers common in industry are investigated. A cylindrical resonator in the TM012 mode is used. The cavity perturbation method and detailed COMSOL simulations are applied for extracting the complex permittivity as a function of temperature. The results are useful for the design of plastic processing tools by heating with electromagnetic fields. The intrinsic parameters of absorption are derived based on two exponential decays: polarization and Arrhenius dependence of the decay times on temperature.
- ItemExciton dispersion in para-quaterphenyl: Significant molecular interactions beyond Coulomb coupling(New York, NY : American Inst. of Physics, 2021) Graf, Lukas; Krupskaya, Yulia; Büchner, Bernd; Knupfer, MartinWe have experimentally determined the momentum dependence of the electronic excitation spectra of para-quaterphenyl single crystals. The parallel arrangement of para-quaterphenyl molecules results in a strong Coulomb coupling of the molecular excitons. Such crystals have been considered to be a very good realization of the Frenkel exciton model, including the formation of H-type aggregates. Our data reveal an unexpected exciton dispersion of the upper Davydov component, which cannot be rationalized in terms of inter-molecular Coulomb coupling of the excitons. A significant reduction of the nearest neighbor coupling due to additional charge-transfer processes is able to provide an explanation of the data. Furthermore, the spectral onset of the excitation spectrum, which represents a heavy exciton resulting from exciton-phonon coupling, also shows a clear dispersion, which had been unknown so far. Finally, an optically forbidden excitation about 1 eV above the excitation onset is observed. © 2021 Author(s).
- ItemLong-term stability of GaAs/AlAs terahertz quantum-cascade lasers(New York, NY : American Inst. of Physics, 2022) Schrottke, L.; Lü, X.; Biermann, K.; Gellie, P.; Grahn, H.T.We have investigated high-performance GaAs/AlAs terahertz (THz) quantum-cascade lasers (QCLs) with respect to the long-term stability of their operating parameters. The output power of lasers that contain an additional, thick AlAs refractive-index contrast layer underneath the cascade structure decreases after three months by about 35%. The deterioration of these lasers is attributed to the oxidation processes in this contrast layer starting from the facets. However, GaAs/AlAs THz QCLs with an Al0.9Ga0.1As refractive-index contrast layer exhibit long-term stability of the operating parameters over many years even when they are exposed to atmospheric conditions. Therefore, these lasers are promising high-power radiation sources in the terahertz spectral region for commercial applications.