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- ItemSecondary Structure and Glycosylation of Mucus Glycoproteins by Raman Spectroscopies(Columbus, Ohio : American Chemical Society, 2016) Davies, Heather S.; Singh, Prabha; Deckert-Gaudig, Tanja; Deckert, Volker; Rousseau, Karine; Ridley, Caroline E.; Dowd, Sarah E.; Doig, Andrew J.; Pudney, Paul D. A.; Thornton, David J.; Blanch, Ewan W.The major structural components of protective mucus hydrogels on mucosal surfaces are the secreted polymeric gel-forming mucins. The very high molecular weight and extensive O-glycosylation of gel-forming mucins, which are key to their viscoelastic properties, create problems when studying mucins using conventional biochemical/structural techniques. Thus, key structural information, such as the secondary structure of the various mucin subdomains, and glycosylation patterns along individual molecules, remains to be elucidated. Here, we utilized Raman spectroscopy, Raman optical activity (ROA), circular dichroism (CD), and tip-enhanced Raman spectroscopy (TERS) to study the structure of the secreted polymeric gel-forming mucin MUC5B. ROA indicated that the protein backbone of MUC5B is dominated by unordered conformation, which was found to originate from the heavily glycosylated central mucin domain by isolation of MUC5B O-glycan-rich regions. In sharp contrast, recombinant proteins of the N-terminal region of MUC5B (D1-D2-D′-D3 domains, NT5B), C-terminal region of MUC5B (D4-B-C-CK domains, CT5B) and the Cys-domain (within the central mucin domain of MUC5B) were found to be dominated by the β-sheet. Using these findings, we employed TERS, which combines the chemical specificity of Raman spectroscopy with the spatial resolution of atomic force microscopy to study the secondary structure along 90 nm of an individual MUC5B molecule. Interestingly, the molecule was found to contain a large amount of α-helix/unordered structures and many signatures of glycosylation, pointing to a highly O-glycosylated region on the mucin.
- ItemNanometer-resolved mechanical properties around GaN crystal surface steps(Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2014) Buchwald, J.; Sarmanova, M.; Rauschenbach, B.; Mayr, S.G.The mechanical properties of surfaces and nanostructures deviate from their bulk counterparts due to surface stress and reduced dimensionality. Experimental indentation-based techniques present the challenge of measuring these effects, while avoiding artifacts caused by the measurement technique itself. We performed a molecular dynamics study to investigate the mechanical properties of a GaN step of only a few lattice constants step height and scrutinized its applicability to indentation experiments using a finite element approach (FEM). We show that the breakdown of half-space symmetry leads to an "artificial" reduction of the elastic properties of comparable lateral dimensions which overlays the effect of surface stress. Contact resonance atomic force microscopy (CR-AFM) was used to compare the simulation results with experiments.
- Item(Metallo)porphyrins for potential materials science applications(Frankfurt, M. : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2017-8-29) Smykalla, Lars; Mende, Carola; Fronk, Michael; Siles, Pablo F.; Hietschold, Michael; Salvan, Georgeta; Zahn, Dietrich R.T.; Schmidt, Oliver G.; Rüffer, Tobias; Lang, HeinrichThe bottom-up approach to replace existing devices by molecular-based systems is a subject that attracts permanently increasing interest. Molecular-based devices offer not only to miniaturize the device further, but also to benefit from advanced functionalities of deposited molecules. Furthermore, the molecules itself can be tailored to allow via their self-assembly the potential fabrication of devices with an application potential, which is still unforeseeable at this time. Herein, we review efforts to use discrete (metallo)porphyrins for the formation of (sub)monolayers by surface-confined polymerization, of monolayers formed by supramolecular recognition and of thin films formed by sublimation techniques. Selected physical properties of these systems are reported as well. The application potential of those ensembles of (metallo)porphyrins in materials science is discussed.
- ItemTopography evolution of germanium thin films synthesized by pulsed laser deposition(New York, NY : American Inst. of Physics, 2017) Schumacher, P.; Mayr, S.G.; Rauschenbach, B.Germanium thin films were deposited by Pulsed Laser Deposition (PLD) onto single crystal Ge (100) and Si (100) substrates with a native oxide film on the surface. The topography of the surface was investigated by Atomic Force Microscopy (AFM) to evaluate the scaling behavior of the surface roughness of amorphous and polycrystalline Ge films grown on substrates with different roughnesses. Roughness evolution was interpreted within the framework of stochastic rate equations for thin film growth. Here the Kardar-Parisi-Zhang equation was used to describe the smoothening process. Additionally, a roughening regime was observed in which 3-dimensional growth occurred. Diffusion of the deposited Ge adatoms controlled the growth of the amorphous Ge thin films. The growth of polycrystalline thin Ge films was dominated by diffusion processes only in the initial stage of the growth.
- ItemThickness dependent exchange bias in martensitic epitaxial Ni-Mn-Sn thin films(New York : American Institute of Physics, 2013) Behler, Anna; Teichert, Niclas; Dutta, Biswanath; Waske, Anja; Hickel, Tilmann; Auge, Alexander; Hütten, Andreas; Eckert, JürgenA thickness dependent exchange bias in the low temperature martensitic state of epitaxial Ni-Mn-Sn thin films is found. The effect can be retained down to very small thicknesses. For a Ni50Mn32Sn18 thin film, which does not undergo a martensitic transformation, no exchange bias is observed. Our results suggest that a significant interplay between ferromagnetic and antiferromagnetic regions, which is the origin for exchange bias, is only present in the martensite. The finding is supported by ab initio calculations showing that the antiferromagnetic order is stabilized in the phase.
- ItemOn the growth of Co-doped BaFe2As2 thin films on CaF2(Bristol : IOP Publ., 2019) Langer, Marco; Meyer, Sven; Ackermann, Kai; Grünewald, Lukas; Kauffmann-Weiss, Sandra; Aswartham, Saicharan; Wurmehl, Sabine; Hänisch, Jens; Holzapfel, BernhardThe competition between phase formation of BaF2 and Ba(Fe1-xCox)2As2 on CaF2 single crystals has been analysed. Ba(Fe0.92Co0.08)2As2 thin films have been deposited by pulsed laser deposition. X-ray diffraction, atomic force microscopy and scanning electron microscopy studies have revealed that the formation of secondary phases and misorientations as well as the growth modes of the Ba(Fe0.92Co0.08)2As2 thin films strongly depend on the growth rate. At high growth rates, formation of BaF2 is suppressed. The dependency of the Ba(Fe0.92Co0.08)2As2 lattice parameters supports the idea of fluorine diffusion into the crystal structure upon suppression of BaF2 formation similar as was proposed for FeSe1-xTex thin films on CaF2. Furthermore, a growth mode transition from a layer growth mechanism to a three-dimensional growth mode at high supersaturation has been found, suggesting similarities between the growth mechanism of iron-based superconductors and high-T c cuprate thin films. © 2019 Published under licence by IOP Publishing Ltd.
- ItemWafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices(New York, NY : Inst., 2021) Knehr, Emanuel; Ziegler, Mario; Linzen, Sven; Ilin, Konstantin; Schanz, Patrick; Plentz, Jonathan; Diegel, Marco; Schmidt, Heidemarie; Il’iche, Evgeni; Siegel, MichaelSuperconducting niobium nitride thin films are used for a variety of photon detectors, quantum devices, and superconducting electronics. Most of these applications require highly uniform films, for instance, when moving from single-pixel detectors to arrays with a large active area. Plasma-enhanced atomic layer deposition (ALD) of superconducting niobium nitride is a feasible option to produce high-quality, conformal thin films and has been demonstrated as a film deposition method to fabricate superconducting nanowire single-photon detectors before. Here, we explore the property spread of ALD-NbN across a 6-in. wafer area. Over the equivalent area of a 2-in. wafer, we measure a maximum deviation of 1% in critical temperature and 12% in switching current. Toward larger areas, structural characterizations indicate that changes in the crystal structure seem to be the limiting factor rather than film composition or impurities. The results show that ALD is suited to fabricate NbN thin films as a material for large-area detector arrays and for new detector designs and devices requiring uniform superconducting thin films with precise thickness control.
- ItemEvolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model(Melville, NY : American Inst. of Physics, 2016) Schewski, R.; Baldini, M.; Irmscher, K.; Fiedler, A.; Markurt, T.; Neuschulz, B.; Remmele, T.; Schulz, T.; Wagner, G.; Galazka, Z.; Albrecht, M.We study the homoepitaxial growth of β-Ga2O3 (100) grown by metal-organic vapour phase as dependent on miscut-angle vs. the c direction. Atomic force microscopy of layers grown on substrates with miscut-angles smaller than 2° reveals the growth proceeding through nucleation and growth of two-dimensional islands. With increasing miscut-angle, step meandering and finally step flow growth take place. While step-flow growth results in layers with high crystalline perfection, independent nucleation of two-dimensional islands causes double positioning on the (100) plane, resulting in twin lamellae and stacking mismatch boundaries. Applying nucleation theory in the mean field approach for vicinal surfaces, we can fit experimentally found values for the density of twin lamellae in epitaxial layers as dependent on the miscut-angle. The model yields a diffusion coefficient for Ga adatoms of D = 7 × 10−9 cm2 s−1 at a growth temperature of 850 °C, two orders of magnitude lower than the values published for GaAs.
- ItemPhenomenology of iron-assisted ion beam pattern formation on Si(001)(Bristol : IOP, 2011) MacKo, S.; Frost, F.; Engler, M.; Hirsch, D.; Höche, T.; Grenzer, J.; Michely, T.Pattern formation on Si(001) through 2 keV Kr+ ion beam erosion of Si(001) at an incident angle of # = 30° and in the presence of sputter codeposition or co-evaporation of Fe is investigated by using in situ scanning tunneling microscopy, ex situ atomic force microscopy and electron microscopy. The phenomenology of pattern formation is presented, and experiments are conducted to rule out or determine the processes of relevance in ion beam pattern formation on Si(001) with impurities. Special attention is given to the determination of morphological phase boundaries and their origin. Height fluctuations, local flux variations, induced chemical inhomogeneities, silicide formation and ensuing composition-dependent sputtering are found to be of relevance for pattern formation.
- ItemNanoscale mechanical surface properties of single crystalline martensitic Ni-Mn-Ga ferromagnetic shape memory alloys(Bristol : IOP, 2012) Jakob, A.M.; Müller, M.; Rauschenbach, B.; Mayr, S.G.Located beyond the resolution limit of nanoindentation, contact resonance atomic force microscopy (CR-AFM) is employed for nano-mechanical surface characterization of single crystalline 14M modulated martensitic Ni-Mn-Ga (NMG) thin films grown by magnetron sputter deposition on (001) MgO substrates. Comparing experimental indentation moduli-obtained with CR-AFM-with theoretical predictions based on density functional theory (DFT) indicates the central role of pseudo plasticity and inter-martensitic phase transitions. Spatially highly resolved mechanical imaging enables the visualization of twin boundaries and allows for the assessment of their impact on mechanical behavior at the nanoscale. The CR-AFM technique is also briefly reviewed. Its advantages and drawbacks are carefully addressed.