Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy

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Date
2018
Volume
113
Issue
26
Journal
Applied physics letters
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Publisher
Melville, NY : American Inst. of Physics
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Abstract

Wide-bandgap group III-nitride semiconductors are of special interest for applications in ultraviolet light emitting diodes, photodetectors, and lasers. However, epitaxial growth of high-quality III-nitride semiconductors on conventional single-crystalline substrates is challenging due to the lattice mismatch and differences in the thermal expansion coefficients. Recently, it has been shown that graphene, a two-dimensional material, can be used as a substrate for growing high-quality III-V semiconductors via quasi-van der Waals epitaxy and overcome the named challenges. Here, we report selective area growth of AlGaN nanopyramids on hole mask patterned single-layer graphene using metal-organic vapor phase epitaxy. The nanopyramid bases have a hexagonal shape with a very high nucleation yield. After subsequent AlGaN/GaN/AlGaN overgrowth on the six {10 (1) over bar1} semi-polar side facets of the nanopyramids, intense room-temperature cathodoluminescence emission is observed at 365 nm with whispering gallery-like modes. This work opens up a route for achieving III-nitride opto-electronic devices on graphene substrates in the ultraviolet region for future applications.

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Munshi, A. M., Kim, D.-C., Heimdal, C. P., Heilmann, M., Christiansen, S. H., Vullum, P. E., et al. (2018). Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy (Melville, NY : American Inst. of Physics). Melville, NY : American Inst. of Physics. https://doi.org//10.1063/1.5052054
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CC BY 4.0 Unported