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Title: Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition
Authors: Hilmi, IsomLotnyk, AndriyGerlach, Jürgen W.Schumacher, PhilippRauschenbach, Bernd
Publishers version: https://doi.org/10.1063/1.4983403
URI: https://oa.tib.eu/renate/handle/123456789/11560
http://dx.doi.org/10.34657/10594
Issue Date: 2017
Published in: APL Materials 5 (2017), Nr. 5
Journal: APL Materials
Volume: 5
Issue: 5
Page Start: 050701
Publisher: Melville, NY : AIP Publ.
Abstract: An attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered) chalcogenide material with van-der-Waals (vdW) epitaxy is of strong interest for non-volatile memory application. In this paper, the epitaxial growth of an exemplary layered chalcogenide material, i.e., stoichiometric Sb2Te3 thin films, is reported. The films were produced on unreconstructed highly lattice-mismatched Si(111) substrates by pulsed laser deposition (PLD). The films were grown by vdW epitaxy in a two-dimensional mode. X-ray diffraction measurements and transmission electron microscopy revealed that the films possess a trigonal Sb2Te3 structure. The single atomic Sb/Te termination layer on the Si surface was formed initializing the thin film growth. This work demonstrates a straightforward method to deposit vdW-epitaxial layered chalcogenides and, at the same time, opens up the feasibility to fabricate chalcogenide vdW heterostructures by PLD.
Keywords: Antimony; Chalcogenides; Data storage equipment; Deposition; Deposits; Digital storage; Film growth; High resolution transmission electron microscopy; Inorganic compounds; Pulsed laser deposition; Pulsed lasers; Thin films; Transmission electron microscopy; Van der Waals forces; X ray diffraction
Type: article; Text
Publishing status: publishedVersion
DDC: 620
600
License: CC BY 4.0 Unported
Link to license: https://creativecommons.org/licenses/by/4.0
Appears in Collections:Ingenieurwissenschaften

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Hilmi, Isom, Andriy Lotnyk, Jürgen W. Gerlach, Philipp Schumacher and Bernd Rauschenbach, 2017. Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition. 2017. Melville, NY : AIP Publ.
Hilmi, I., Lotnyk, A., Gerlach, J. W., Schumacher, P. and Rauschenbach, B. (2017) “Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition.” Melville, NY : AIP Publ. doi: https://doi.org/10.1063/1.4983403.
Hilmi I, Lotnyk A, Gerlach J W, Schumacher P, Rauschenbach B. Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition. Vol. 5. Melville, NY : AIP Publ.; 2017.
Hilmi, I., Lotnyk, A., Gerlach, J. W., Schumacher, P., & Rauschenbach, B. (2017). Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition (Version publishedVersion, Vol. 5). Version publishedVersion, Vol. 5. Melville, NY : AIP Publ. https://doi.org/https://doi.org/10.1063/1.4983403
Hilmi I, Lotnyk A, Gerlach J W, Schumacher P, Rauschenbach B. Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition. 2017;5(5). doi:https://doi.org/10.1063/1.4983403


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