The 3D transient semiconductor equations with gradient-dependent and
interfacial recombination

We establish the well-posedness of the transient van Roosbroeck system in three space dimensions under realistic assumptions on the data: non-smooth domains, discontinuous coefficient functions and mixed boundary conditions. Moreover, within this analysis, recombination terms may be concentrated on surfaces and interfaces and may not only depend on chargecarrier densities, but also on the electric field and currents. In particular, this includes Avalanche recombination. The proofs are based on recent abstract results on maximal parabolic and optimal elliptic regularity of divergence-form operators.

Keywords

Van Roosbroeck’s system, semiconductor device, Avalanche recombination, surface recombination, nonlinear parabolic system, heterogeneous material, discontinuous coefficients and data, mixed boundary conditions

URI

https://doi.org/10.34657/3333
https://oa.tib.eu/renate/handle/123456789/1763

Citation

Disser, K., & Rehberg, J. (2018). The 3D transient semiconductor equations with gradient-dependent and interfacial recombination (Vol. 2507). Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik. https://doi.org//10.20347/WIAS.PREPRINT.2507

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Mathematik

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