Stationary solutions to an energy model for semiconductor devices where the equations are defined on different domains

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Date
2006
Volume
1173
Issue
Journal
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Publisher
Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik
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Abstract

We discuss a stationary energy model from semiconductor modelling. We accept the more realistic assumption that the continuity equations for electrons and holes have to be considered only in a subdomain $Omega_0$ of the domain of definition $Omega$ of the energy balance equation and of the Poisson equation. Here $Omega_0$ corresponds to the region of semiconducting material, $OmegasetminusOmega_0$ represents passive layers. Metals serving as contacts are modelled by Dirichlet boundary conditions. We prove a local existence and uniqueness result for the two-dimensional stationary energy model. For this purpose we derive a $W^1,p$-regularity result for solutions of systems of elliptic equations with different regions of definition and use the Implicit Function Theorem.

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Keywords
Energy models, mass, charge and energy transport in heterostructures, strongly coupled elliptic systems, mixed boundary conditions, Implicit Function Theorem, existence, uniqueness, regularity.
Citation
Glitzky, A., & Hünlich, R. (2006). Stationary solutions to an energy model for semiconductor devices where the equations are defined on different domains (Vol. 1173). Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik.
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