Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

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Date
2017
Volume
7
Issue
Journal
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Publisher
New York : American Institute of Physics
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Abstract

A high degree of vacancy ordering is obtained by annealing amorphous GeTe-Sb2Te3 (GST) alloys deposited on a crystalline substrate, which acts as a template for the crystallization. Under annealing the material evolves from amorphous to disordered rocksalt, to ordered rocksalt with vacancies arranged into (111) oriented layers, and finally converts into the stable trigonal phase. The role of the interface in respect to the formation of an ordered crystalline phase is studied by comparing the transformation stages of crystalline GST with and without a capping layer. The capping layer offers another crystallization interface, which harms the overall crystalline quality.

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Keywords
Amorphous metals, Crystal structure, Semiconductor device, fabrication, Annealing Chemical compounds
Citation
Bragaglia, V., Mio, A. M., & Calarco, R. (2017). Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces. 7. https://doi.org//10.1063/1.5000338
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License
CC BY 4.0 Unported