Polarized recombination of acoustically transported carriers in GaAs nanowires


The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation during transport.

Charge transport, Spin transport, GaAs, Nanowires, Surface acoustic waves, Photoluminescence, Polarization
Möller, M., Hernández-Mínguez, A., Breuer, S., Pfüller, C., Brandt, O., de Lima Jr, M. M., et al. (2012). Polarized recombination of acoustically transported carriers in GaAs nanowires. 7. https://doi.org//10.1186/1556-276X-7-247
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