Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

Abstract

The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski-Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g (2) (0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.

Description
Keywords
gaas quantum dot, gallium, quantum dot, unclassified drug, light attenuation, performance assessment, polarization, quantum mechanics, semiconductor industry, Article, atomic force microscopy, comparative study, controlled study, measurement, oscillation, phonon, photon, polarization, semiconductor, solid state
Citation
Huber, D., Reindl, M., Huo, Y., Huang, H., Wildmann, J. S., Schmidt, O. G., et al. (2017). Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots. 8. https://doi.org//10.1038/ncomms15506
License
CC BY 4.0 Unported