InN nanowires: Growth and optoelectronic properties
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Advisor
Volume
5
Issue
11
Journal
Materials
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Basel : MDPI AG
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Abstract
An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.
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Keywords
Electrical properties, III-V, Molecular beam epitaxy (MBE), Nanoscale, Optical properties, Optoelectronic, Photoconductivity, Self-assembly semiconducting, Catalyst-free, Chemical vapor deposition process, III-V, InN Nanowires, Nano scale, Optoelectronic, Optoelectronic properties, Catalysts, Chemical vapor deposition, Epitaxial growth, Molecular beam epitaxy, Nanowires, Optical properties, Photoconductivity, Self assembly, Transport properties, Electric properties
Keywords GND
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Article
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publishedVersion
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CC BY-NC-SA 3.0 Unported