InN nanowires: Growth and optoelectronic properties

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Date
2012
Volume
5
Issue
11
Journal
Materials
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Publisher
Basel : MDPI AG
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Abstract

An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.

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Citation
Calarco, R. (2012). InN nanowires: Growth and optoelectronic properties (Basel : MDPI AG). Basel : MDPI AG. https://doi.org//10.3390/ma5112137
License
CC BY-NC-SA 3.0 Unported