Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy
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Date
2012
Volume
7
Issue
Journal
Nanoscale Research Letters
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Publisher
New York, NY [u.a.] : Springer
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Abstract
In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of composition and excitation wavelength. The accuracy of the method and its limitations are evidenced through the analysis of a multilayer and of self-assembled islands.
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Citation
Picco, A., Bonera, E., Pezzoli, F., Grilli, E., Schmidt, O. G., Isa, F., et al. (2012). Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy (New York, NY [u.a.] : Springer). New York, NY [u.a.] : Springer. https://doi.org//10.1186/1556-276X-7-633
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CC BY 2.0 Unported