Low resistance n-contact for UVC LEDs by a two-step plasma etching process
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Date
2020
Journal Title
Journal ISSN
Volume Title
Publisher
Bristol : IOP Publ.
Abstract
The impact of plasma etching on the formation of low-resistance n-contacts on the AlGaN:Si current spreading layer during the chip fabrication of ultraviolet light-emitting diodes (UV LEDs) emitting at 265 nm is investigated. A two-step plasma etching process with a first rapid etching using BCl3/Cl2 gas mixture and a second slow etching step using pure Cl2 gas has been developed. The etching sequence provides smooth mesa side-walls and an n-AlGaN surface with reduced surface damage. Ohmic n-contacts with a contact resistivity of 3.5 10-4 Ωcm2 are obtained on Si-doped Al0.65Ga0.35N layers and the operating voltages of the UVC LEDs were reduced by 2 V for a current of 20 mA. © 2020 The Author(s). Published by IOP Publishing Ltd.
Description
Keywords
high Almole fraction n-AlGaN, light emitting diode, low resistance n-contact, ohmic contact, operating voltage, plasma etch
Citation
Citation
Cho, H. K., Kang, J. H., Sulmoni, L., Kunkel, K., Rass, J., Susilo, N., et al. (2020). Low resistance n-contact for UVC LEDs by a two-step plasma etching process (Version publishedVersion, Vol. 35). Version publishedVersion, Vol. 35. Bristol : IOP Publ. https://doi.org//10.1088/1361-6641/ab9ea7