The electronic structure of ϵ-Ga2O3

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Date
2019
Volume
7
Issue
2
Journal
APL materials : high impact open access journal in functional materials science
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Publisher
Melville, NY : AIP Publ.
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Abstract

The electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the surface and bulk properties. The latter measurements reveal a peculiar satellite structure in the Ga 2p core level spectrum, absent at the surface, and a core-level broadening that can be attributed to photoelectron recoil. The photoemission experiments indicate that the energy separation between the valence band and the Fermi level is about 4.4 eV, a valence band maximum at the Γ point and an effective mass of the highest lying bands of – 4.2 free electron masses. The value of the bandgap compares well with that obtained by optical experiments and with that obtained by calculations performed using a hybrid density-functional, which also reproduce well the dispersion and density of states.

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Mulazzi, M., Reichmann, F., Becker, A., Klesse, W. M., Alippi, P., Fiorentini, V., et al. (2019). The electronic structure of ϵ-Ga2O3 (Melville, NY : AIP Publ.). Melville, NY : AIP Publ. https://doi.org//10.1063/1.5054395
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CC BY 4.0 Unported