Highly linear fundamental up-converter in InP DHBT technology for W-band applications

Abstract

A fundamental up-converter with high linearity is presented, realized as full Gilbert cell (GC) mixer using a 800 nm transferred substrate (TS) InP-DHBT technology. The LO input of the Gilbert cell conducts from 75 to 100 GHz and requires 5 dBm of input power. The GC attains a single sideband (SSB) conversion gain of 10 ± 1 dB within the frequency from 82 to 95 GHz with a saturated output power of -1 dBm at 86 GHz and >5 dB conversion gain between 75 and 100 GHz. The up-converter exhibits 25 GHz of IF bandwidth. The DC power consumption is only 51 mW. © 2020 The Authors. Microwave and Optical Technology Letters published by Wiley Periodicals, Inc.

Description
Keywords
Gilbert cell (GC) mixer, indium phosphide double heterojunction bipolar transistor (DHBT), Local oscillator (LO), lower side band (LSB), single sideband (SSB), transferred-substrate (TS) process, upper side band (USB)
Citation
Hossain, M., Stoppel, D., Boppel, S., Heinrich, W., & Krozer, V. (2020). Highly linear fundamental up-converter in InP DHBT technology for W-band applications. 62(7). https://doi.org//10.1002/mop.32357
License
CC BY 4.0 Unported