Modulation Linearity Characterization of Si Ring Modulators
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Date
2021
Volume
39
Issue
24
Journal
Journal of lightwave technology : LT
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Book Title
Publisher
Washington, DC : OSA
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Abstract
Modulation linearity of Si ring modulators (RMs) is investigated through the numerical simulation based on the coupled-mode theory and experimental verification. Numerical values of the key parameters needed for the simulation are experimentally extracted. Simulation and measurement results agree well. With these, the influence of input optical wavelength and power on the Si RM linearity are characterized.
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Citation
Jo, Y., Mai, C., Lischke, S., Zimmermann, L., & Choi, W.-Y. (2021). Modulation Linearity Characterization of Si Ring Modulators (Washington, DC : OSA). Washington, DC : OSA. https://doi.org//10.1109/JLT.2021.3093463
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License
CC BY 4.0 Unported