Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.

Keywords

BiCMOS ICs, BiCMOS integrated circuits, Bipolar transistors, data communication, Doping, Heterojunction bipolar transistors, heterojunction bipolar transistors (HBTs), Millimeter wave transistors, millimeter-wave circuits, radar, Silicon, Silicon germanium, submillimeter-wave circuits, transceivers (TRXs)

URI

https://oa.tib.eu/renate/handle/123456789/8133
https://doi.org/10.34657/7173

Citation

Kissinger, D., Kahmen, G., & Weigel, R. (2021). Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies. 69(10). https://doi.org//10.1109/TMTT.2021.3095235

Collections

Ingenieurwissenschaften

License

CC BY 4.0 Unported

https://creativecommons.org/licenses/by/4.0/

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